Publication
Semiconductor Science and Technology
Paper
Confinement and Coulomb interactions in Schottky-gated, laterally confined double-barrier quantum well heterostructures
Abstract
The conductance of laterally confined double-barrier quantum well resonant tunnelling heterostructures is investigated. The lateral confinement is provided by a Schottky gate and can be varied in a continuous way. Data for dots with nominal diameters in the submicrometre range are reported.