Tri-gate In_0.53Ga_0.47As-on-insulator junctionless field effect transistors

Abstract

A tri-gate In0.53Ga0.47As-on-insulator (InGaAs-OI) junctionless field-effect transistor (JLFET) architecture is demonstrated. The devices feature a 20-nm-thick n-In0.53Ga0.47As channel doped to 1018 /cm3 obtained by direct wafer bonding and a 3.5-nm-thick A12O3 gate dielectric deposited by plasma-enhanced atomic layer deposition (PE-ALD). The impact of the fin width (Wfin) and gate length (Lg) scaling at fixed channel doping (Nd) and equivalent oxide thickness (EOT) on the device performance is discussed and benchmarked.