Lithium-Niobate-Based Frequency-Agile Integrated Lasers
Viacheslav Snigirev, Annina Riedhauser, et al.
ECOC 2022
In this letter we report on high-performance InGaAs FinFETs with optimized on-off trade-off. The InGaAs FinFETs are fabricated on silicon substrate using a CMOS-compatible replacement-metal-gate process. Excellent off-state performance is achieved by introducing source-drain spacers and doped extension regions. Extensions are fabricated using a digital etching process, a cycling etching technique that allows one to carefully control the position of the junction underneath the spacers. FinFETs with gate length of 13 nm show an on-current of 300 μA μm-1 at V DD = 0.5 V and fixed I OFF = 100 nA μm-1, the highest reported for ultra-scaled Si CMOS-compatible III-V FETs.
Viacheslav Snigirev, Annina Riedhauser, et al.
ECOC 2022
Svenja Mauthe, Heinz Schmid, et al.
OMN 2019
Felix Eltes, Daniele Caimi, et al.
IPC 2018
Veeresh Deshpande, V. Djara, et al.
ECS Meeting 2015 Phoenix