Transport and exchange of hydrogen isotopes in silicon-device-related stacks

Abstract

A study was conducted on thermally driven D and H transport and exchange in typical metal-oxide-semiconductor (MOS) device structures. As such, D and H were quantified and profiled by elastic recoil detection (ERD), which was superior to SIMS in the accuracy of total amounts but showed limited depth resolution. The results clearly show that poly-Si and borophosphosilicate glass (BPSG) were effective in transporting hydrogenous species at rather low temperature.