R.E. Stahlbush, E. Cartier, et al.
Microelectronic Engineering
Atomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0→PbH and PbH+H0→Pb+H2. The passivation reaction occurs more efficiently keeping the steady-state P b density at a low value of only 3-6×1011 cm -2 during atomic hydrogen exposure. This low Pb density can only account for a small fraction of the total number of interface states produced by atomic hydrogen.
R.E. Stahlbush, E. Cartier, et al.
Microelectronic Engineering
M.J. Uren, V. Nayar, et al.
JES
Z. Luo, T.P. Ma, et al.
International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Soon-Cheon Seo, L.F. Edge, et al.
VLSI Technology 2011