Conference paper
Probing the limits of silicon-based nanoelectronics
S.J. Wind, Y. Taur, et al.
MRS Spring Meeting 1995
Atomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0→PbH and PbH+H0→Pb+H2. The passivation reaction occurs more efficiently keeping the steady-state P b density at a low value of only 3-6×1011 cm -2 during atomic hydrogen exposure. This low Pb density can only account for a small fraction of the total number of interface states produced by atomic hydrogen.
S.J. Wind, Y. Taur, et al.
MRS Spring Meeting 1995
J.H. Stathis, J. Chapple-Sokol, et al.
Applied Physics Letters
S. Lombardo, J.H. Stathis, et al.
ECS Meeting 2009
J.H. Stathis
Journal of Applied Physics