Hiroyuki Nishikawa, James H. Stathis, et al.
Applied Physics Letters
Atomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0→PbH and PbH+H0→Pb+H2. The passivation reaction occurs more efficiently keeping the steady-state P b density at a low value of only 3-6×1011 cm -2 during atomic hydrogen exposure. This low Pb density can only account for a small fraction of the total number of interface states produced by atomic hydrogen.
Hiroyuki Nishikawa, James H. Stathis, et al.
Applied Physics Letters
D.A. Buchanan, D.J. DiMaria, et al.
Applied Physics Letters
R. Ludeke, M.T. Cuberes, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
K. Zhao, J.H. Stathis, et al.
IRPS 2011