E. Gusev, C. D'Emic
Applied Physics Letters
Surface potential profiles of the junction area of a cleaved n-Si (100) Hf O2 p+ -polycrystalline silicon (poly-Si) gate stack reveal a dipole potential in the oxide, hole trapping at the Hf O2 /poly-Si interface, with the Fermi level ∼0.4 eV below the Si conduction bandedge and enhanced and inhomogeneous hole depletion in the p+ -poly-Si. The dipole accounts for band bending reduction in the n-Si and is consistent with flatband voltage shifts reported for similar gate stacks. © 2005 American Institute of Physics.
E. Gusev, C. D'Emic
Applied Physics Letters
E. Mendez, L.L. Chang, et al.
Physical Review Letters
H.C. Lu, E. Gusev, et al.
Journal of Applied Physics
C. Driemeier, E. Gusev, et al.
Applied Physics Letters