H. Sakaki, L.L. Chang, et al.
Applied Physics Letters
Changes with onset of metallic behavior in the position of an impurity-stabilized Fermi level at the GaAs-Ag interface are interpreted in a model based on delocalization of the impurity levels. The resulting energy broadening of interface states appears to be an important mechanism underlying the Schottky behavior; in particular the model obviates the need for separate donor or acceptor properties of the impurity levels. © 1988 The American Physical Society.
H. Sakaki, L.L. Chang, et al.
Applied Physics Letters
F.W. Saris, W.K. Chu, et al.
Applied Physics Letters
M. Prietsch, R. Ludeke
Surface Science
R. Ludeke, A. Bauer
Physical Review Letters