Conference paper
Self-aligned bipolar npn transistor with 60 nm epitaxial base
J.N. Burghartz, S. Mader, et al.
IEDM 1989
An anomalous enhanced diffusion is observed when As-implanted Si samples are exposed to rapid heating (∼ seconds) from room temperature to temperatures exceeding 1000°C. This diffusion can be characterized by a low activation energy of ∼1.8 eV and is active during a very short time (≲ 1 s) probably during the rapid heating up of the sample.
J.N. Burghartz, S. Mader, et al.
IEDM 1989
T.O. Sedgwick, V.P. Kesan, et al.
IEDM 1991
J.D. Mis, S. Mader, et al.
Journal of Applied Physics
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983