A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
trans-trans-2,5-Bis-[2-{5-(2,2′-bithienyl)}ethenyl]thiophene (BTET) was synthesized and then purified in a gradient sublimation system. It was characterized using IR, UV-Vis and mass spectroscopy, and elemental analysis. BTET films were deposited with molecular beam deposition (MBD) or spin-coating from solution. Insulated-gate field-effect transistor (IGFET) devices based on such films were used to study their electrical transport properties. A field-effect mobility of 0.01 cm2 V-1 s-1 was measured from films deposited with MBD, while the mobility of the spin-coated films was slightly above 0.001 cm2 V-1 s-1. © Published by 1997 Elsevier Science S.A.
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Imran Nasim, Melanie Weber
SCML 2024
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Ming L. Yu
Physical Review B