Thin-film trilayer manganate junctions

Abstract

Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La0.67Sr0.33MnO3-SrTiO3-La 0.67Sr0.33 MnO3 trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2 K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.