D.A. Buchanan
Applied Physics Letters
Thin-film transistors (TFT's) have been made incorporating a thin (~380Å), high-quality plasma-enhanced chemical vapor deposition (PECVD) SiO2 film as the gate dielectric in a staggered-inverted (SI) structure. Threshold voltages and mobilities have been found to be in the range of 1.6-2.4 V and 0.20-0.25 cm2 V ‘s-1, respectively, where the exact values are dependent upon the measurement technique used. Very low gate leakage currents (< 10-11 A) were recorded when measured using a ramped I-V technique even for electric fields as high as 5 x 106 V/cm. © 1988 IEEE
D.A. Buchanan
Applied Physics Letters
D.A. Buchanan, M.V. Fischetti, et al.
Applied Surface Science
E.A. Irene, E. Tierney, et al.
Applied Physics Letters
L. Xie, K.R. Farmer, et al.
Microelectronic Engineering