Thermally stable ultra-thin Zr silicate for CMOS applications

Abstract

The electrical and physical properties of ultra-thin zirconium silicate films deposited by the jet-vapor-deposition (JVD) process were reported. The fabrication of the films with equivalent oxide thickness of 1 nm with high thermal stability, low leakage and good electrical properties was shown. It was shown that zirconium silicate films can survive an annealing temperature as high as 1000°C.