D.J. Wolford, G.D. Gilliland, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Theory of substitutional deep traps in covalent semiconductors
Abstract
The energies of substitutional deep A1 impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies. © 1980 The American Physical Society.
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