D.J. Wolford, G.D. Gilliland, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
The energies of substitutional deep A1 impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies. © 1980 The American Physical Society.
D.J. Wolford, G.D. Gilliland, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
D.J. Wolford, G.D. Gilliland, et al.
Gallium Arsenide and Related Compounds 1991
G. Northrop, J.F. Morar, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
D.J. Wolford, H. Mariette, et al.
Gallium Arsenide and Related Compounds 1984