Sung Ho Kim, Oun-Ho Park, et al.
Small
Extended Hckel theory is applied to GaP, GaAs, and to the nitrogen isoelectronic trap in GaP and GaAs. The theory confirms the A1-symmetric nature of the N-trap electron state NX (the A line in GaP) and lends support to the expectation that even small inward relaxation of the neighboring Ga atoms significantly lowers the NX binding energy (2 eV/). When compared with the results of Hsu's phenomenological one-band model, the present calculations indicate that a quantitative theory of the N trap (and all deep traps) in GaAs1-xPx must accurately account for the electronic structure of both the valence and the conduction bands. © 1980 The American Physical Society.
Sung Ho Kim, Oun-Ho Park, et al.
Small
Lawrence Suchow, Norman R. Stemple
JES
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Kigook Song, Robert D. Miller, et al.
Macromolecules