L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Ion bombardment sputtering is widely used in combination with various analytical approaches to determine the elemental composition of thin solid layers as a function of depth. It is generally recognized that the sputter-etching process can seriously influence the nature of experimentally determined composition depth profiles. The characteristics of the sputter-etching process which must be considered in depth profile work include ion-bombardment-induced alteration of the surface composition, ion-bombardment-induced motion of atoms in the near-surface region and ion-bombardment-induced roughening of the sample surface. A discussion of these processes is presented and much of the recent work in this field is summarized. © 1979.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Ellen J. Yoffa, David Adler
Physical Review B