Conference paper
Breakdown measurements of ultra-thin SiO2 at low voltage
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50 μA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on n-FET width. This approach gives targets for tolerable values of leakage caused by gate-oxide breakdown.
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
V. Narayanan, V.K. Paruchuri, et al.
VLSI Technology 2006
J.H. Stathis, M. Wang, et al.
Microelectronics Reliability
S. Lombarde, F. Palumbo, et al.
ICICDT 2004