G. Ribes, P. Mora, et al.
IRPS 2010
We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50 μA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on n-FET width. This approach gives targets for tolerable values of leakage caused by gate-oxide breakdown.
G. Ribes, P. Mora, et al.
IRPS 2010
E. Cartier, J.H. Stathis
Applied Physics Letters
J.H. Stathis, B.P. Linder, et al.
Microelectronics Reliability
M.R. Kozlowski, M. Staggs, et al.
SPIE Laser-Induced Damage in Optical Materials 1990