Pong-Fei Lu, G.P. Li, et al.
IEEE Electron Device Letters
The effects of X-ray exposure on two types of p-n junction leakage currents will be presented. X-rays generate surface states at the oxide-silicon interface and lower the junction electric field at the surface. As a result, the usual field-insensitive generation-recombination current (type 1) increases and the field-sensitive leakage current (type 2) decreases. The type 1 current increases linearly with the incident energy density. Some surface states are responsible for the reduction of the surface electric field, and thus the surface component of the type 2 current. The results resemble that of the late stage of hot-carrier stress. The surface states affecting these two types of leakage have different annealing properties. The ones that increase the type 1 current can be annealed out with a short heat cycle, while the ones that lower the type 2 current require a very long heat cycle to remove. © 1989 IEEE
Pong-Fei Lu, G.P. Li, et al.
IEEE Electron Device Letters
John D. Cressler, James Warnock, et al.
IEEE Electron Device Letters
Juan R. Maldonado
Proceedings of SPIE 1989
Tak H. Ning, Denny D. Tang
IEEE T-ED