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Publication
SPIE Advanced Lithography 2012
Conference paper
The effects of plasma exposure on low-k dielectric materials
Abstract
Plasma-induced damage to low-k dielectric materials can be quantified by separation of the effects of charged-particle bombardment, photon bombardment, and gas-radical flux. For ion and photon bombardment, the spatial location and extent of the damage can be determined. Damage effects from radical flux will be shown to be small. Both SiCOH and photo-programmable low-k (PPLK) dielectrics will be discussed. © 2012 SPIE.