Proceedings of the IEEE

Paper

01 Jan 1963

The Effect of Temperature on the Properties of GaAs Laser

View publication

Abstract

No abstract available.

Paper

Pressure-dependent measurements on n⁺ GaAs (Si, Sn): The effect of deep donor (DX) states on the electrical properties and persistent photoconductivity

T. Foster, D.K. Maude, et al.

Physica Scripta

Paper

Simple method for the calculation of the deformation profiles in chiral nematic liquid crystal cells with asymmetric pretilt

C.-J. Chen, Alan Lien, et al.

Journal of Applied Physics

Paper

Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film-substrate interface

Chin-An Chang, M. Heiblum, et al.

Applied Physics Letters

Paper

GaAs Optically Coupled Transistor with a Lasing Emitter

R.F. Rutz, M.I. Nathan, et al.

Proceedings of the IEEE

View all publications