Skip to main content
Research
Focus areas
Blog
Publications
Careers
About
Back
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Back
About
Overview
Labs
People
Back
Semiconductors
Back
Artificial Intelligence
Back
Quantum Computing
Back
Hybrid Cloud
Back
Overview
Back
Labs
Back
People
Research
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Blog
Publications
Careers
About
Overview
Labs
People
Open IBM search field
Close
Proceedings of the IEEE
Paper
01 Jan 1963
The Effect of Temperature on the Properties of GaAs Laser
View publication
Abstract
No abstract available.
Related
Paper
Harmonic generation in injection lasers
Paper
Raman spectra of amorphous Si and related tetrahedrally bonded semiconductors
Paper
P-N Junction Lasers
Paper
Temperature dependence of minority-carrier mobility and recombination time in p-type GaAs
View all publications
