R. Ludeke
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We have grown n+ -GaAs films using Sn or Ge doping on n + -GaAs substrates by molecular beam epitaxy and studied the vertical electronic transport through the film-substrate interface. An interfacial layer with high resistance and a nonlinear I-V characteristic is observed whenever the substrates have been sputter-cleaned and annealed prior to the growth. Similar results are observed for the nonsputtered substrates with a high surface coverage of carbon. Such an interfacial layer can be eliminated in both cases by a predeposition of a Sn monolayer prior to the growth of the n+ -GaAs layers.
R. Ludeke
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
H. Sakaki, L.L. Chang, et al.
Applied Physics Letters
Chin-An Chang, J.E.E. Baglin, et al.
Applied Physics Letters
A.W. Kleinsasser, J.M.E. Harper, et al.
Thin Solid Films