The effect of electron-hole scattering on minority carrier transport in bipolar transistors

Abstract

We have examined the role of constraints on carrier flow on electron-hole scattering of minority carriers. In a bipolar transistor, in which the flow of majority carrier current normal to the junction potential barriers is usually negligible, the effect of electron-hole scattering is less than would be inferred from measurements of transport in p-i-n diodes or in the Shockley-Haynes experiment. In addition, as a result of the momentum transferred fromthe minority carriers to the majority carriers, an electric field is developed which enhances the flow of minority carriers, particularly at high injection levels. © 1985.