About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Texture and resistivity of dilute binary Cu(Al), Cu(In), Cu(Ti), Cu(Nb), Cu(Ir), and Cu(W) allow thin films
Abstract
The annealing behavior of a group of dilute Cu-alloy films was studied. Pure Cu and dilute binary Cu(Al), Cu(In), Cu(Ti) Cu(Nb), Cu(Ir), and Cu(W) alloy films were electron-beam evaporated at nominally room temperature onto thermally oxidized silicon wafers. For all the films studied, annealing resulted in the lowering of film resistivity and in the strengthening of film texture, and the best combination of strong <111> fiber texture and the lowest postanneal resistivity was observed for Cu(Ti).