Techniques for Small-Signal Analysis of Semiconductor Devices

Abstract

Techniques for ascertaining the small-signal behavior of semiconductor devices in the context of numerical device simulation are discussed. Three standard approaches to this problem will be compared: (i) transient excitation followed by Fourier decomposition, (ii) incremental charge partitioning, and (iii) sinusoidal steady-state anal-ysis. Sinusoidal steady-state analysis is shown to be the superior approach by providing accurate, rigorously correct results with reasonable computational cost and programming commitment. Copyright © 1985 by The Institute of Electrical and Electronics Engineers, Inc.