A General Control-Volume Formulation for Modeling Impact Ionization in Semiconductor Transport

Abstract

A method for incorporating impact ionization into a general coutrol-volume formulation of semiconductor transport is de-scribed. The methods for electric-field and current-density vector evaluation and generated charge partitioning within a two-dimensional triangular element are given. The techniques employed allow device breakdown to be accurately determined independent of mesh orientation to current flow direction. The avalanche breakdown of a 1-µm n-MOSFET illustrates the approach. Regions where the drain current is a multivalued function of drain voltage are directly and self-consis-tently calculated for this device. Copyright © 1985 by The Institute of Electrical and Electronics Engineers, Inc.