Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Tantalum disilicide films were deposited by conventional dc sputtering from a nominally stoichiometric cathode. The film characteristics were analyzed by x-ray diffraction, backscatter-ing, electron microprobe and electron transmission microsco-py. The film resistivity and stresses were also measured. The effects of heat treatments up to 1000°C were systematically investigated. After a 1000°C anneal, resistivities of 45-60 μΩcm can be achieved reproducibly. Films deposited on sili-con can be oxidized in a steam atmosphere without inducing significant changes in the silicide layer itself. An attempt is made to explain the oxidation behavior in terms of kinetic factors. © 1981 AIME.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
J.K. Gimzewski, T.A. Jung, et al.
Surface Science