About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Symmetry of electron states in GaP
Abstract
We show that the symmetry of bound electron states in GaP depends upon the choice of origin for the group operations and hence upon the location of impurity in the crystal lattice. This provides an explanation of the discrepancy between the high radiative efficiency associated with group VI donors and group V isoelectronic centers and the low efficiency of group IV donors (Si) in GaP. © 1968 The American Physical Society.