Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Strong interactions, or correlations, between the d or f electrons in transition-metal oxides lead to various types of metal-insulator transitions that can be triggered by external parameters such as temperature, pressure, doping, magnetic fields and electric fields. Electric-field-induced metallization of such materials from their insulating states could enable a new class of ultrafast electronic switches and latches. However, significant questions remain about the detailed nature of the switching process. Here, we show, in the canonical metal-to-insulator transition system V 2 O 3, that ultrafast voltage pulses result in its metallization only after an incubation time that ranges from a ̂1/4150 ps to many nanoseconds, depending on the electric field strength. We show that these incubation times can be accounted for by purely thermal effects and that intrinsic electronic-switching mechanisms may only be revealed using larger electric fields at even shorter timescales. © 2014 Macmillan Publishers Limited. All rights reserved.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME