L. Stolt, O. Thomas, et al.
Journal of Applied Physics
The evolution of stress in silicide/polycrystalline Si (poly-Si) layered structures has been monitored in situ in the temperature range of 25-700°C. At elevated temperatures, the silicide/poly-Si structure becomes morphologically unstable. The grain growth of poly-Si leads to an inversion of the positions of the two layers. The in situ stress measurement shows that this structural degradation is accompanied by a substantial increase in tensile stress of around 0.4 GPa, for NiSi, Pd2Si, and PtSi. A simple calculation indicates that the magnitude of the stress increase can be accounted for, at least to a large extend, by the volume contraction caused by the grain growth of poly-Si.
L. Stolt, O. Thomas, et al.
Journal of Applied Physics
R. Mann, G.L. Miles, et al.
Applied Physics Letters
K. Barmak, A. Gungor, et al.
MRS Proceedings 2002
J.E.E. Baglin, F.M. D'Heurle, et al.
Journal of Applied Physics