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Chemistry of Materials
Leakage currents introduced in the low-field, direct-tunneling regime of thin silicon dioxide layers after high-field stress are related to defects produced by hot electron transport in the oxide layer. From these studies, it is concluded that the "generation" of neutral electron traps in thin oxides are the dominant cause of this phenomenon. © 1995.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
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