J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Leakage currents introduced in the low-field, direct-tunneling regime of thin silicon dioxide layers after high-field stress are related to defects produced by hot electron transport in the oxide layer. From these studies, it is concluded that the "generation" of neutral electron traps in thin oxides are the dominant cause of this phenomenon. © 1995.
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
J.K. Gimzewski, T.A. Jung, et al.
Surface Science