Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
We have calculated inter-dislocation spacing and strain relaxation in stable and metastable strained GexSi1-x epilayers using an improved theory. Epilayers with graded Ge compositions are also considered. Strain relaxation on annealing MBE grown layers is measured and is found to agree with the calculated values. © 1991.
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
J.C. Marinace
JES