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Microelectronic Engineering
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Strain relaxation in GeSi layers with uniform and graded composition

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Abstract

We have calculated inter-dislocation spacing and strain relaxation in stable and metastable strained GexSi1-x epilayers using an improved theory. Epilayers with graded Ge compositions are also considered. Strain relaxation on annealing MBE grown layers is measured and is found to agree with the calculated values. © 1991.

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Microelectronic Engineering

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