J. Rogozik, V. Dose, et al.
Physical Review B
We investigate the scanning tunnelling microscopy-induced H and D atom desorption from Si(100)-(2 × 1)(D). The desorption of both atoms shows the same energy threshold that corresponds well with the computed σ → σ * excitation energy of the Si-H group. The H desorption yield, however, is much higher than the D yield. We ascribe this to the greater influence of quenching processes on the excited state of the Si-D species. We use wavepacket dynamics to follow the motion of H and D atoms, and conclude that desorption occurs, for the most part, from the 'hot' ground state populated by the quenching process. Site-selective excitation-induced chemistry is found in the desorption of H from Si(100)-(3 × 1).
J. Rogozik, V. Dose, et al.
Physical Review B
J.E. Demuth, Ph. Avouris, et al.
Journal of Electron Spectroscopy and Related Phenomena
D.S. Bethune, J.R. Lankard, et al.
The Journal of Chemical Physics
R.E. Walkup, R.W. Dreyfus, et al.
Colloque International du CNRS 1982