New preamorphization technique for very shallow p+-n junctions
B. Davari, E. Ganin, et al.
VLSI Technology 1989
The spreading resistance due to current crowding at the end-points of an FET channel is investigated. An analytic expression is derived giving this resistance as function of a few parameters. TWO-dimensional numerical simulations, using finite-element techniques, confirm the accuracy of the simple analytical approach. For short channel devices the current crowding effect is found to give a non-negligible contribution to the total source resistance. In order to optimize the FET performance, the geometry and conductivity of the source/drain regions must be carefully designed, trading off short channel effect and transconductance degradation. Copyright © 1983 by The Institute of Electrical and Electronics Engineers, Inc.
B. Davari, E. Ganin, et al.
VLSI Technology 1989
N. Kawai, L.L. Chang, et al.
Applied Physics Letters
G. Baccarani, M.R. Wordeman
Solid-State Electronics
I.F. Chang, G.A. Sai-Halasz
JES