Conference paper
Recent advances in MRAM technology
W.J. Gallagher, D.W. Abraham, et al.
VLSI Technology 2005
Cobalt ferrite, CoFe2O4, thin films are explored as pinning layers for read sensor applications. High ΔR/R values, 12.8%, and high pinning fields, 1500 Oe, are observed. Unlike other coercivity based pinning layers, the soft properties of the free layer are not compromised. The properties of the cobalt ferrite layers are strongly dependent on the microstructure, which, in turn, depends on the reactive sputtering process. © 2002 American Institute of Physics.
W.J. Gallagher, D.W. Abraham, et al.
VLSI Technology 2005
J.R. Childress, M.K. Ho, et al.
INTERMAG 2002
S.S.P. Parkin, K.P. Roche, et al.
Journal of Applied Physics
Ganping Ju, Lu Chen, et al.
Physical Review B - CMMP