Spin-Transfer-Torque MRAM: the Next Revolution in Memory

Abstract

This paper introduces the operation and features of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four main applications of STT-MRAM are described. A review is given of the initial demonstration of perpendicular STT-MRAM and the subsequent development of this technology at IBM. Finally, several potential paths forward to more advanced applications are described.