STT-MRAM with double magnetic tunnel junctions
Guohan Hu, J.H. Lee, et al.
IEDM 2015
We examine room temperature current-voltage (IV) characteristics of CoFeB|MgO|CoFeB type of perpendicularly magnetized tunnel junctions developed for memory applications. From their nonlinear bias voltage dependence, a conductance "cross-scaling"is seen that is consistent with the involvement of inelastic spin-flip scattering in electrodes. A phenomenological model is constructed that connects the parameters of spin-flip scatter-related inelastic events with both magnetoresistance and spin-transfer torque. The model provides measurable, electrode-specific properties such as interface exchange stiffness as it affects spin-torque performance.
Guohan Hu, J.H. Lee, et al.
IEDM 2015
Jonathan Z. Sun, S.L. Brown, et al.
Physical Review B - CMMP
Luqiao Liu, Ching-Tzu Chen, et al.
Nature Physics
Christopher Safranski, Yu-Jin Chen, et al.
Applied Physics Letters