Special Correspondence Effect of Randomness in the Distribution of Impurity Ions on FET Thresholds in Integrated Electronics

Abstract

A model of the effect of random fluctuations in the number of impurity atoms in the depletion layer of a field-effect transistor (FET) is presented and analyzed. It is concluded that the range of space charge per unit area that must be anticipated on a chip containing N FET's each of area A is n is the doping level of the substrate. Copyright © 1975 by The Institute of Electrical and Electronics Engineers, Inc.