Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The present oxidation study covers the 780°-1150°C temperature range using 0.001 Ω-cm Si which is heavily B- and P-doped Si (6-8 × 1019 cm-3) in dry O2 (<1 ppm H2O). Emphasis is on the lower temperatures thereby extending the scope of already published studies. For 0.001 Ω-cm Si at temperatures greater than 1000°C, the over-all oxidation rates were found to conform to the orderB doped > P doped > STD (where STD is 2 Ω-cm B-doped Si), which is in agreement with published results for the higher temperatures. However, for the lower oxidation temperatures of the present study (≥1000°C), the order for the over-all oxidation rates was found to be P doped > B doped ≤ STD The oxidation data was taken using an automated ellipsometer in situ and was analyzed using a linear-parabolic oxidation model. The resulting linear rate constants could be correlated with well-known B depletion and P accumulation effects near the Si-SiO2 interface while a consideration of the structural roles of B and P in the SiO2 network was necessary to explain the parabolic rate constants. Phase separation of B2O3 occurred in the SiO2 grown on B-doped Si and Si precipitation was observed in all the oxides grown at 1150°C but neither of these phenomena are believed to affect the oxidation kinetics. The extended temperature range showed non-Arrhenius behavior which could explain the divergent activation energies reported from published studies. © 1978, The Electrochemical Society, Inc. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Peter J. Price
Surface Science
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Lawrence Suchow, Norman R. Stemple
JES