Si ALE using chlorine/hydrogen exchange. Fundamentals and films

Abstract

A simplified kinetic model for the self-limiting growth of Si using alternate pulses of SiCl2H2 and H2 is presented to held explain the observed plateaus in plots of growth rate vs. either SiCl2H2 pressure or temperature. The growth of Si on Ge(100) using alternate pulses of Si2Cl6 and Si2H6 near 500°C, giving fine control over film thickness without Ge out-diffusion, is then reviewed. Studies of Si ALE using atomic hydrogen (Hat) and chlorosilanes are also described. © 1994.