SCHOTTKY BARRIER FORMATION AT METAL-HYDROGENATED AMORPHOUS SILICON INTERFACES.

Abstract

Schottky barrier formation at metal-hydrogenated amorphous silicon interfaces has been investigated. The dependence of the intrinsic barrier height, measured by different techniques, upon the metal work function and temperature has been reported. The capacitance and conductance is observed to be strongly dc voltage, temperature and frequency dependent. All results are interpreted in terms of a self-consistent model that incorporates Schottky barrier at the metal-a-Si:H interface and a conduction process that exhibits an electrode-limited to bulk-limited transition.