Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The intensity of the dark electron-spin-resonance (ESR) signal, which is commonly observed in nitrogen-rich hydrogenated amorphous silicon nitride (a-SiN1.6), is shown to depend on temperature. This temperature dependence is compared to that observed in amorphous arsenic (a-As), which has a similar thermally generated ESR signal, and to the temperature-independent ESR signal observed in a-Si. Comparisons of optically induced absorption spectra for a-SiN1.6 and a-As suggest that the defects contributing to the subband-gap absorption may not exhibit the strong electron-lattice interactions that characterize those in a-As but, rather, result most probably from large potential fluctuations. © 1994 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.