E.T. Yu, M. Johnson, et al.
Applied Physics Letters
Cross-sectional scanning tunneling microscopy and spectroscopy were used to study a modulation-doped Si/Si0.76Ge0.24(001) superlattice. Contrast between the Si and Si0.76Ge0.24 layers has been observed in topographic images. Features such as band-edge discontinuities and band bending arising from doping have been detected in spectroscopic measurements at a series of points across the superlattice structure.
E.T. Yu, M. Johnson, et al.
Applied Physics Letters
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
A.R. Powell, Subramanian S. Iyer
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
G. Tas, R.J. Stoner, et al.
Applied Physics Letters