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Publication
IEDM 2008
Conference paper
Scaling of ino.7gao.3as buried-channel MOSFETs
Abstract
Sub-100 nm short-channel Ino7Ga03As MOSFETs are demonstrated for both depletion- and enhancement-mode devices. High current of 960 μA/um and record transconductance of 793 μS/um have been achieved. Scaling behavior is investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual source velocity.