Scalable low power vertical memory

Abstract

An experimental memory array with the capability of operation at cell area below 0.15 μm2 for the Gigabit generation is described. Channel injection through a thin oxide (≈ 3 nm) into the floating gate of a vertical transistor allow scalable, ultra-low power, and dense (4-6 square of the minimum pitch) structures that operate with 100 ns write speeds at low voltages, > 105 s retention time, and endurance exceeding 1010 cycles with no measurable degradation. Non-volatile structures are achieved with a compromise in speed and power. Multiple-self alignment and use of thin film growth, deposition, and etching techniques allow for a significant reduction in the lithography needs.