Diffusive creep in polycrystals
D.B. Laks, D. Maroudas, et al.
MRS Fall Meeting 1993
Wide-band-gap semiconductors typically can be doped either n-type or p-type, but not both. Compensation by native defects has often been invoked as the source of this difficulty. Using first-principles total-energy calculations we show that, for ZnSe and diamond, native-defect concentrations are too low to cause compensation. For nonstoichiometric ZnSe, native defects compensate both n-type and p-type material; thus deviations from stoichiometry cannot explain why ZnSe can be doped only one way. In the absence of a generic mechanism, specific dopants should be examined case by case. © 1991 The American Physical Society.
D.B. Laks, D. Maroudas, et al.
MRS Fall Meeting 1993
P.J.H. Denteneer, C.G. Van De Walle, et al.
Physical Review Letters
P.J.H. Denteneer, C.G. Van De Walle, et al.
Physical Review B
D.B. Laks, C.G. Van De Walle, et al.
Physical Review B