Marco Bellini, Peng Cheng, et al.
SPIE International Symposium on Fluctuations and Noise 2007
The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the IC is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of VBE and VCB modulation on IC is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode. © 2005 IEEE.
Marco Bellini, Peng Cheng, et al.
SPIE International Symposium on Fluctuations and Noise 2007
Jiahui Yuan, John D. Cressler, et al.
IEEE Transactions on Electron Devices
Jin Cai, A. Ajmera, et al.
VLSI Technology 2002
Jae-Sung Rieh, Andreas Stricker, et al.
Proceedings of the IEEE