Variability analysis for sub-100 nm PD/SOI CMOS SRAM cell
Rajiv V. Joshi, Saibal Mukhopadhyay, et al.
ESSCIRC 2004
This paper presents a new circuit technique to alleviate the uncontrollable floating-body-induced hysteretic component present in the transfer characteristics of voltage-mode CMOS Schmitt trigger circuits in a partially depleted silicon-on-insulator technology. This technique integrates a successive switching threshold shift mechanism with the systematic body contact scheme, resulting in improved noise immunity and well-defined hysteresis behavior for the Schmitt trigger circuit that is suitable for use as a low-noise receiver, level shifter, waveform-reshaping circuit, and delay element in very large-scale integrated applications. © 2004, The Institute of Electrical and Electronics Engineers, Inc. All rights reserved.
Rajiv V. Joshi, Saibal Mukhopadhyay, et al.
ESSCIRC 2004
Ching-Te Chuang, G.P. Li, et al.
IEEE Electron Device Letters
Koushik K. Das, Ching-Te Chuang, et al.
Microelectronics Journal
Chunjian Ni, Rajiv V. Joshi, et al.
ASME Electronic and Photonics Packaging Division 2007