P.C. Van Son, F.P. Milliken, et al.
Surface Science
We have observed resonant tunneling of electrons in AlAs-GaAs-AlAs heterostructures, via a quantum state localized in AlAs. The resonance manifests itself as a distinct feature in the current-voltage characteristics, at 4 K. The confined energy state arises from a potential profile derived from the X point of the Brillouin zone, in which AlAs behaves as a quantum well and GaAs as a barrier.
P.C. Van Son, F.P. Milliken, et al.
Surface Science
M. Heiblum, E. Mendez, et al.
Applied Physics Letters
E. Mendez, W.I. Wang
Applied Physics Letters
M. Ogawa, E. Mendez
Solid State Electronics