Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
We have calculated the gain of laser heterostructures whose active regions consist of two strongly coupled quantum wells subjected to an electric field. The results demonstrate that by using two 40 Å GaAs wells separated by an 11 Å Ga0.7Al0.3As barrier a field-induced wavelength tunability of over 7 nm is possible at room temperature. © 1994.
T.N. Morgan
Semiconductor Science and Technology
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Small
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
J.A. Barker, D. Henderson, et al.
Molecular Physics