Reliable 5 ns writing of spin-transfer torque MRAM

Abstract

We report reliable 5 ns switching of spin-transfer torque magneto-resistive random access memory (STT-MRAM) devices for the first time by demonstrating 100% write-error-rate (WER) yield at 1e-6 write-error floor of 256 devices with tight distributions and steep WER slope at a nominal size of 43 nm and a resistance area produce (RA) = 11 <formula> <tex>$\Omega\cdot \mu{\rm m}^2$</tex> </formula>. A single device was demonstrated to have less than 1e-10 write-error rate with 5 ns write pulses. We also show promising 3 ns switching performance, with 94% WER yield at 1e-6 write-error floor of 64 devices with nominal size of 50 nm.