Ming L. Yu
Physical Review B
We have investigated the behaviour under accelerated reliability tests of MOS capacitors stressed at high voltage in accumulation with ultra-thin SiO 2 dielectrics and with tungsten gates. Standard p+ poly-Si gates are used as reference. In this report, we show and discuss data concerning the oxide wearout and the breakdown transient. © 2004 Elsevier B.V. All rights reserved.
Ming L. Yu
Physical Review B
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989