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Langmuir
We have investigated the behaviour under accelerated reliability tests of MOS capacitors stressed at high voltage in accumulation with ultra-thin SiO 2 dielectrics and with tungsten gates. Standard p+ poly-Si gates are used as reference. In this report, we show and discuss data concerning the oxide wearout and the breakdown transient. © 2004 Elsevier B.V. All rights reserved.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
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Proceedings of SPIE 1989
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JES
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APS Global Physics Summit 2025