Conference paper
Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
We have investigated the behaviour under accelerated reliability tests of MOS capacitors stressed at high voltage in accumulation with ultra-thin SiO 2 dielectrics and with tungsten gates. Standard p+ poly-Si gates are used as reference. In this report, we show and discuss data concerning the oxide wearout and the breakdown transient. © 2004 Elsevier B.V. All rights reserved.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials